Professor, Department of Materials Science and Engineering

 

Zhejiang University, Yuquan Campus
38 Zheda Road
Hangzhou, China 310027

 

Other Appointments

Deputy Director, Institute of Semiconductor Materials
 

Professional Activities

Committee member, Sub-Society of Solid Defects, Chinese Society of Physics
 

Education

Ph.D. –Zhejiang University, Semiconductor Materials,1998
M. S – Zhejiang University, Semiconductor Materials, 1991,
B.S. – Sichuan University, Semiconductor Physics and Devices, 1987

Working Experience

2006-, Professor, Department of Materials Science and Engineering, Zhejiang University
2001-2005, Associate professor, Department of Materials Science and Engineering, Zhejiang University
1998 - 2000, Assistant professor, Department of Materials Science and Engineering, Zhejiang University
 

Awards and Honors

National Natural Science Award, Second-class prize, 2005
New Century Excellent Talents in Universities, 2004
 

Research Interests

Crystal growth and defect engineering of Czochralski silicon
Optoelectronic Materials and Devices
 

Current Projects

1. Defect Engineering of 200 mm Silicon Wafers (2010-1014) National Sci&Technol key projects
2. Silicon-based light-emitting materials and devices (2007-2011) 973 program

Publication List

1. Formation of pnp bipolar structure by thermal donors in nitrogen-containing p-type Czochralski silicon wafers, Xiangyang Ma,Xuegong Yu, Ruixin Fan, and Deren Yang, Appl.Phys.Lett.81, 496(2002)
2. Oxygen Precipitation heterogeneously nucleating on silicon phosphide precipitates in heavily phosphorus-doped Czochralski silicon, Yuheng Zeng, Xiangyang Ma*, Daxi Tian, Weiyan Wang, Longfei Gong, Deren Yang, and Duanlin Que, J.Appl.Phys. 105, 093503(2009)
3. Electrically pumped ZnO film ultraviolet random lasers on silicon substrate, Xiangyang Ma, Peiliang Chen, Dongsheng Li, Yuanyuan Zhang, and Deren Yang, Appl.Phys.Lett.91, 251109(2007)
4. Room temperature electrically pumped ultraviolet random lasing from ZnO nanorod arrays on Si, Xiangyang Ma, Jingwei Pan, Peiliang Chen, Dongsheng Li, Hui Zhang, Yangyang, and Deren Yang, Opt.Express. 17, 14426(2009)
5. Electrically pumped ultraviolet random lasing from ZnO films: Compensation between optical gain and light scattering, Ye Tian, Xiangyang Ma, Lu Jin, and Deren Yang, Appl.Phys.Lett.97, 251115(2010)

Conference List

1. Electroluminescence from ZnO/n+-Si Heterojunction, Xiangyang Ma, Peiliang Chen, Dongsheng Li, and Deren Yang, Proceeding of the 12th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, P.625. Erice, Italy, Oct14-19, 2007.
2. Oxygen precipitation in conventional and nitrogen co-doped heavily arsenic-doped Czochralski silicon crystals: Oswald ripening, Xiangyang Ma, Yan Feng, Yuheng Zeng, and Deren Yang, Proceeding of the 13th International Autumn Meeting on Gettering and Defect Engineering in Semiconductor Technology, P.275. Berlin, Germany, Sept 26- Oct 02, 2009.
3. Heavily phosphorous-doped Czochralski silicon: Crystal growth and Defects (Invited talk), 16th International conference on crystal growth, Beijing, China, Aug 8-13, 2010.
4. Electrically pumped random lasing from ZnO Materials (Invited talk), 7th IEEE International conference on Group IV photonics, Beijing, China, Sept 1-3.

Patent List

1. A kind of internal gettering process for Czochralksi silicon wafers. Xiangyang Ma, Deren Yang, Daxi Tian, Longfei Gong, Liben Li, and Duanlin Que, Paten No. ZL200410053864.6
2. A kind of silicon-based ZnO light-emitting device and its fabrication method, Xiangyang Ma, Deren Yang, Peiliang Chen, and Duanlin Que, Patent No. ZL200510061603.3
3. A kind of silicon-based ZnO nanorod array electrically pumped random lasers, Xiangyang Ma, Jingwei Pan, Peiliang Chen, and Deren Yang, Patent No. ZL200910099487.2
4. A strategy for enhancing electroluminescence from silicon-based TiO2 film devices, Xiangyang Ma, Deren Yang, Yuanyuan Zhang, Peiliang Chen, and Duanlin Que, Patent No. 200910099556.X