Lv Jianguo

Ph.D., Associate Professor, Distinguished Young Scholar
State Key Laboratory of Silicon Materials, Department of Materials Science and Engineering, Zhejiang University

 

Phone: +86 571 8795 2187
Fax: +86 571 8795 2625
Email: lujianguo@zju.edu.cn
Office: Room 334, The Cao Guang Biao Building

Zhejiang University, Yuquan Campus
38 Zheda Road
Hangzhou, China 310027

 

Professional Activities

Fellow, Chinese Material Society
Fellow, Chinese Society of Electronic Engineering
Guest professor, Key Laboratory of Advanced Display and System Applications (Shanghai University), Ministry of Education



 

Education

Ph.D. – Zhejiang University, Materials Science and Engineering, 2005
B. S – Xi’an University of Technology, Materials Science and Engineering, 2000

Working Experience

2007-, Associate Professor, Department of Materials Science and Engineering, Zhejiang University
2005-2007, Foreign Researcher with JSPS Postdoctoral Fellowship, International Innovation Center, Kyoto University, Japan


 

Awards and Honors

Top 10 Young Scholars in the 11th Five-Year Plan of Zhejiang University, 2011
National 100 Excellent Doctoral dissertation of China, Nominated Prize, 2008
National Natural Science Award of China, Second Prize, 2007
Science and Technology Award of Zhejiang Province, First Prize, 2006
Science and Technology Award of Zhejiang Province, First Prize, 2007


 

Research Interests

Research areas: Semiconductor films and devices, Functional nanomaterials and Applications.
Mainly interests: (1) p-type doping of ZnO, ZnO-based optoelectronic devices including LEDs, TFTs, and UV detectors; (2) ZnO-based transparent conductive films and applications in solar cells and coated glasses; (3) ZnO-based nanostructures and nanodevices; and (4) Others: Functional oxides, film and nanostructure growth methods.


 

Current Projects

  1. National Natural Science Foundation of China under Grant No. 51002131.
  2. Qianjiang Talent Project of Zhejiang Province under Grant No. 2009R10046.
  3. SRF for ROCS, SEM under Grant No. 2009-1001.
  4. Specialized Research Fund for the Doctoral Program of Higher Education under Grant No. 200803351004.
  5. Aerospace Support Technology Fund of China under Grant No. GFJG-xxxxxx.
  6. Open Project of Key Laboratory of Advanced Display and System Applications (Shanghai University), Ministry of Education under Grant No. P201003.
  7. Excellent Young Teacher Program (Zi Jin Program) of Zhejiang University.
  8. Grant-in-Aid for Scientific Research for JSPS Postdoctoral Program for Foreign Researchers under Grant No. 17-05329.



 

Publication List

Recent Publications
[1] X. Bie, J. G. Lu, Y. P. Wang, L. Gong, Q. B. Ma, and Z. Z. Ye, Optimization of parameters for deposition of Ga-doped ZnO films by DC reactive magnetron sputtering using Taguchi method, Appl. Surf. Sci. 257, 6125-6128 (2011).
[2] Y. P. Wang, J. G. Lu, X. Bie, Z. Z. Ye, X. Li, D. Song, X. Y. Zhao, and W. Y. Ye, Transparent conductive and near-infrared reflective Cu-based Al-doped ZnO multilayer films grown by magnetron sputtering at room temperature, Appl. Surf. Sci. 257, 5966-5971 (2011).
[3] L. Gong, J. G. Lu, and Z. Z. Ye, Conductive Ga doped ZnO/Cu/Ga doped ZnO thin films prepared by magnetron sputtering at room temperature for flexible electronics, Thin Solid Films 519, 3870-3874 (2011).
[4] J. G. Lu, X. Bie, Y. P. Wang, L. Gong, and Z. Z. Ye, Transparent conductive and near-infrared reflective Ga-doped ZnO/Cu bilayer films grown at room temperature, J. Vac. Sci. Technol. A 29, 03A115 (2011).
[5] Y. P. Wang, J. G. Lu, X. Bie, L. Gong, X. Li, D. Song, X. Y. Zhao, W. Y. Ye, and Z. Z. Ye, Transparent conductive Al-doped ZnO thin films grown at room temperature, J. Vac. Sci. Technol. A 29, 031505 (2011).
[6] L. Q. Zhang, Z. Z. Ye, B. Lu, J. G. Lu, Y. Z. Zhang, L. P. Zhu, J. Y. Huang, W. G. Zhang, J. Huang, J. Zhang, J. Jiang, K. W. Wu, and Z. Xie, Ferromagnetism induced by donor-related defects in Co-doped ZnO thin films, J. Alloys Compd. 509, 2149-2153 (2011).
[7] L. Gong, Z. Z. Ye, and J. G. Lu, In-N codoped p-type ZnMgO thin films with bandgap engineering, Vacuum 85, 365-367 (2010).
[8] X. L. Ma, J. Zhang, J. G. Lu, and Z. Z. Ye, Room temperature growth and properties of ZnO films by pulsed laser deposition, Appl. Surf. Sci. 257, 1310 (2010).
[9] L. Gong, Z. Z. Ye, J. G. Lu, L. P. Zhu, J.Y. Huang, X. Q. Gu, and B. H. Zhao, Highly transparent conductive and near-infrared reflective ZnO:Al thin films, Vacuum 84, 947 (2010).
[10] L. Gong, J. G. Lu, and Z. Z. Ye, Room-temperature growth and optoelectronic properties of GZO/ZnO bilayer films on polycarbonate substrates by magnetron sputtering, Sol. Energy Mater. Sol. Cells 94, 1282 (2010).
[11] L. Gong, J. G. Lu, and Z. Z. Ye, Transparent and conductive Ga-doped ZnO films grown by RF magnetron sputtering on polycarbonate substrates, Sol. Energy Mater. Sol. Cells 94, 937 (2010).
[12] J. Zhang, X. L. Ma, Y. P. Wang, J. G. Lu, Recent advances and analysis in research on UV detectors based on ZnMgO, Materials Review 24 (2), 22-26 (2010) (in Chinese).
[13] L. Q. Zhang, Z. Z. Ye, J. G. Lu, B. Lu, Y. Z. Zhang, L. P. Zhu, J. Zhang, D. Yang, K. W. Wu, J. Y. Huang, and Z. Xie, Influence of p-type and n-type dopants on the magnetic properties of ZnCuO based diluted magnetic semiconductor thin films, J. Phys. D -Appl. Phys. 43, 015001 (2010).

Selected Publications
[1] X. Bie, J. G. Lu, Y. P. Wang, L. Gong, Q. B. Ma, and Z. Z. Ye, Optimization of parameters for deposition of Ga-doped ZnO films by DC reactive magnetron sputtering using Taguchi method, Appl. Surf. Sci. 257, 6125-6128 (2011).
[2] Y. P. Wang, J. G. Lu, X. Bie, Z. Z. Ye, X. Li, D. Song, X. Y. Zhao, and W. Y. Ye, Transparent conductive and near-infrared reflective Cu-based Al-doped ZnO multilayer films grown by magnetron sputtering at room temperature, Appl. Surf. Sci. 257, 5966-5971 (2011).
[3] L. Gong, J. G. Lu, and Z. Z. Ye, Conductive Ga doped ZnO/Cu/Ga doped ZnO thin films prepared by magnetron sputtering at room temperature for flexible electronics, Thin Solid Films 519, 3870-3874 (2011).
[4] J. G. Lu, X. Bie, Y. P. Wang, L. Gong, and Z. Z. Ye, Transparent conductive and near-infrared reflective Ga-doped ZnO/Cu bilayer films grown at room temperature, J. Vac. Sci. Technol. A 29, 03A115 (2011).
[5] Y. P. Wang, J. G. Lu, X. Bie, L. Gong, X. Li, D. Song, X. Y. Zhao, W. Y. Ye, and Z. Z. Ye, Transparent conductive Al-doped ZnO thin films grown at room temperature, J. Vac. Sci. Technol. A 29, 031505 (2011).
[6] L. Q. Zhang, Z. Z. Ye, B. Lu, J. G. Lu, Y. Z. Zhang, L. P. Zhu, J. Y. Huang, W. G. Zhang, J. Huang, J. Zhang, J. Jiang, K. W. Wu, and Z. Xie, Ferromagnetism induced by donor-related defects in Co-doped ZnO thin films, J. Alloys Compd. 509, 2149-2153 (2011).
[7] X. L. Ma, J. Zhang, J. G. Lu, and Z. Z. Ye, Room temperature growth and properties of ZnO films by pulsed laser deposition, Appl. Surf. Sci. 257, 1310 (2010).
[8] L. Gong, J. G. Lu, and Z. Z. Ye, Room-temperature growth and optoelectronic properties of GZO/ZnO bilayer films on polycarbonate substrates by magnetron sputtering, Sol. Energy Mater. Sol. Cells 94, 1282 (2010).
[9] L. Gong, J. G. Lu, and Z. Z. Ye, Transparent and conductive Ga-doped ZnO films grown by RF magnetron sputtering on polycarbonate substrates, Sol. Energy Mater. Sol. Cells 94, 937 (2010).
[10] L. Q. Zhang, Z. Z. Ye, J. G. Lu, B. Lu, Y. Z. Zhang, L. P. Zhu, J. Zhang, D. Yang, K. W. Wu, J. Y. Huang, and Z. Xie, Influence of p-type and n-type dopants on the magnetic properties of ZnCuO based diluted magnetic semiconductor thin films, J. Phys. D -Appl. Phys. 43, 015001 (2010).
[11] Y. F. Yang, Y. Z. Zhang, Y. Z. Jin, Z. Z. Ye, J. G. Lu, H. P. He, J. Y. Huang, L.P. Zhu, and B. H. Zhao, Synthesis and characterization of highly faceted (Zn,Cd)O nanorods with nonhexagonal cross sections, Cryst. Growth Des. 9, 5043 (2009).
SCI (IF=4.162), EI; (published 10 November 2009); 引用0次, 其中他引0次.
[12] X. Bie, J. G. Lu, L. Gong, L. Lin, B. H. Zhao, and Z. Z. Ye, Transparent conductive ZnO:Ga films prepared by DC reactive magnetron sputtering at low temperature, Appl. Surf. Sci. 256, 289 (2009).
[13] M. X. Qiu, X. Q. Gu, Z. Z. Ye, J. G. Lu, H. P. He, Y. Z. Zhang, and B. H. Zhao, p-type behavior of nitrogen doped, lithium doped, and nitrogen-lithium codoped Zn0.11Mg0.89O thin films, J. Vac. Sci. Technol. B 27, 1897 (2009).
[14] Y. Z. Zhang, J. G. Lu, Z. Z. Ye, H. P. He, L. L. Chen, and B. H. Zhao, Identification of acceptor states in Li-N dual-doped p-type ZnO thin films, Chin. Phys. Lett. 26, 046103 (2009).
[15] M. X. Qiu, Z. Z. Ye, J. G. Lu, H. P. He, J. Y. Huang, L. P. Zhu, and B. H. Zhao, Growth and properties of ZnO nanorods and nanonails by thermal evaporation, Appl. Surf. Sci. 255, 3972–3976 (2009).
[16] J. R. Wang, Y. Z. Zhang, Z. Z. Ye, J. G. Lu, H. P. He, Y. J. Zeng, Q. B. Ma, J. Y. Huang, L. P. Zhu, Y. Z. Wu, Y. F. Yang, and L. Gong, Microstructure and crystal defects in ZnMgO pleated nanosheets, J. Appl. Phys. 104, 103507 (2008).
[17] S. S. Lin, J. G. Lu, Z. Z. Ye, H. P. He, X. Q. Gu, L. X. Chen, J. Y. Huang, and B. H. Zhao, p-type behavior in Na-doped ZnO films and ZnO homojunction light-emitting diodes, Solid State Commun. 148, 25–28 (2008).
[18] S. S. Lin, Z. Z. Ye, J. G. Lu, H. P. He, L. X. Chen, X. Q. Gu, J. Y. Huang, L. P. Zhu, and B. H. Zhao, Na doping concentration tuned conductivity of ZnO films via pulsed laser deposition and electroluminescence from ZnO homojunction on silicon substrate, J. Phys. D: Appl. Phys. 41, 155114 (2008).
[19] J. G. Lu and S. Fujita, Hydrogen-assisted nitrogen-acceptor doping in ZnO, Phys. Stat. Sol (a) 205, 1975-1977 (2008).
[20] J. G. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka, and Y.Kamada, Junction properties of nitrogen-doped ZnO thin films, Phys. Stat. Sol (c) 5, 3088-3090 (2008).
[21] Y. F. Yang, Z. Z. Ye, J. G. Lu, H. P. He, Y. Z. Jin, J. Y. Huang, J. R. Wang, M. X. Qiu, and B. H. Zhao, Rational synthesis and characterization of heterostructures of ZnO nanocombs with (Zn,Cd)O nanocaps, J. Phys. D: Appl. Phys. 41, 115410 (2008).
[22] Y. Z. Zhang, J. G. Lu, Z. Z. Ye, H. P. He, L. P. Zhu, B. H. Zhao, and L. Wang, Effects of growth temperature on Li–N dual-doped p-type ZnO thin films prepared by pulsed laser deposition, Appl. Surf. Sci. 254, 1993-1996 (2008).
[23] J. G. Lu, Y. Z. Zhang, Z. Z. Ye, Y. J. Zeng, J. Y. Huang, and L. Wang, Rational synthesis and tunable optical properties of quasi-aligned Zn1–xMgxO nanorods, Appl. Phys. Lett. 91, 193108 (2007).
[24] Y. Z. Zhang, J. G. Lu, L. L. Chen, and Z. Z. Ye, Properties of N-doped ZnO thin films in annealing process, Solid State Commun. 143, 562–565 (2007).
[25] Z. Z. Ye, J. G. Lu, Y. Z. Zhang, Y. J. Zeng, L. L. Chen, F. Zhuge, G. D. Yuan, H. P. He, L. P. Zhu, J. Y. Huang, and B. H. Zhao, ZnO light-emitting diodes fabricated on Si substrates with homobuffer layers, Appl. Phys. Lett. 91, 113503 (2007).
[26] J. G. Lu, S. Fujita, T. Kawaharamura, and H. Nishinaka, Roles of hydrogen and nitrogen in p-type doping of ZnO, Chem. Phys. Lett. 441, 68-71 (2007).
[27] Y. Z. Zhang, J. G. Lu, Z. Z. Ye, Y. J. Zeng, L. P. Zhu, and J. Y. Huang, Quasi-aligned Zn1–xMgxO nanorods synthesized by thermal evaporation, J. Phys. D -Appl. Phys. 40, 3490-3493 (2007).
[28] J. G. Lu, Q. L. Liang, Y. Z. Zhang, Z. Z. Ye, and S. Fujita, Improved p-type conductivity and acceptor states in N-doped ZnO thin films, J. Phys. D -Appl. Phys. 40, 3177-3181 (2007).
[29] J. G. Lu, S. Fujita, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima, Z. Z. Ye, Y. J. Zeng, Y. Z. Zhang, L. P. Zhu, H. P. He, and B. H. Zhao, Carrier concentration dependence of band gap shift in n-type ZnO:Al films, J. Appl. Phys. 101, 083705 (2007).
[30] J. G. Lu, T. Kawaharamura, H. Nishinaka, Y. Kamada, T. Ohshima, and S. Fujita, ZnO-based thin films synthesized by atmospheric pressure mist chemical vapor deposition, J. Cryst. Growth 299, 1-10 (2007).
[31] J. G. Lu, S. Fujita, T. T. Kawaharamura, H. Nishinaka, Y. Kamada, and T. Ohshima, Carrier concentration induced band-gap shift in Al-doped Zn1?xMgxO thin films, Appl. Phys. Lett. 89, 262107 (2006).
[32] L. L. Chen, Z. Z. Ye, J. G. Lu, and P. K. Chu, Control and improvement of p-type conductivity in indium and nitrogen codoped ZnO thin films, Appl. Phys. Lett. 89, 252113 (2006).
[33] L. L. Chen, Z. Z. Ye, J. G. Lu, H. P. He, B. H. Zhao, L. P. Zhu, P. K. Chu, and L. Shao, Co-doping effects and electrical transport in In-N doped zinc oxide, Chem. Phys. Lett. 432, 352-355 (2006).
[34] J. G. Lu, Z. Z. Ye, Y. J. Zeng, L. P. Zhu, L. Wang, J. Yuan, B. H. Zhao, and Q. L. Liang, Structural, optical, and electrical properties of (Zn,Al)O films over a wide range of compositions, J. Appl. Phys. 100, 073714 (2006).
[35] J. G. Lu, Y. Z. Zhang, Z. Z. Ye, Y. J. Zeng, H. P. He, L. P. Zhu, J. Y. Huang, L. Wang, J. Yuan, B. H. Zhao, and X. H. Li, Control of p- and n-type conductivity in Li-doped ZnO thin films, Appl. Phys. Lett. 89, 112113 (2006).
[36] J. G. Lu, Z. Z. Ye, G. D. Yuan, Y. J. Zeng, F. Zhuge, L. P. Zhu, B. H. Zhao, and S. B. Zhang, Electrical characterization of ZnO-based homojunctions, Appl. Phys. Lett. 89, 053501 (2006).
[37] Y. J. Zeng, Z. Z. Ye, J. G. Lu, W. Z. Xu, L. P. Zhu, B. H. Zhao, and S. Limpijumnong, Identification of acceptor states in Li-doped p-type ZnO thin films, Appl. Phys. Lett. 89, 042106 (2006).
[38] J. G. Lu, Z. Z. Ye, Y. Z. Zhang, Q. L. Liang, S. Fujita, and Z. L. Wang, Self-assembled ZnO quantum dots with tunable optical properties, Appl. Phys. Lett. 89, 023122 (2006).
[39] J. G. Lu, Y. Z. Zhang, Z. Z. Ye, L. P. Zhu, L. Wang, B. H. Zhao, and Q. L. Liang, Low-resistivity, stable p-type ZnO thin films realized using a Li-N dual-acceptor doping method, Appl. Phys. Lett. 88, 222114 (2006).
[40] J. G. Lu, Z. Z. Ye, J. Y. Huang, L. P. Zhu, B. H. Zhao, Z. L. Wang, and Sz. Fujita, ZnO quantum dots synthesized by a vapor phase transport process, Appl. Phys. Lett. 88, 063110 (2006).
[41] J. G. Lu, L. P. Zhu, Z. Z. Ye, F. Zhuge, B. H. Zhao, D. W. Ma, L. Wang, and J. Y. Huang, Reproducibility and Stability of N-Al codoped p-type ZnO thin films, J. Mater. Sci. 41, 467-470 (2006).
[42] L. L. Chen, J. G. Lu, Z. Z. Ye, M. Y. Lin, B. H. Zhao, M. Y. Ye, S. J. Li, and L. P. Zhu, p-type behavior in In-N codoped ZnO thin films, Appl. Phys. Lett. 87, 252106 (2005).
[43] J. G. Lu, L. P. Zhu, Z. Z. Ye, F. Zhuge, B. H. Zhao, L. Wang, J. Y. Huang, and J. Yuan, p-type ZnO films by codoping of nitrogen and aluminum and ZnO-based p-n homojunctions, J. Cryst. Growth 283, 413-417 (2005).
[44] J. G. Lu, L. P. Zhu, Z. Z. Ye, F. Zhuge, Y. J. Zeng, B. H. Zhao, and D. W. Ma, Dependence of properties of N-Al codoped p-type ZnO thin films on growth temperature, Appl. Surf. Sci. 245, 109-113 (2005).
[45] J. G. Lu, L. P. Zhu, Z. Z. Ye, Y. J. Zeng, F. Zhuge, B. H. Zhao, and D. W. Ma, Improved N-Al codoped p-type ZnO thin films by introduction of a homo-buffer layer, J. Cryst. Growth 274, 425-429 (2005).
[46] J. G. Lu, Z. Z. Ye, F. Zhuge, Y. J. Zeng, B. H. Zhao, and L. P. Zhu, p-type conduction in N-Al co-doped ZnO thin films, Appl. Phys. Lett. 85, 3134-3135 (2004).
[47] J. G. Lu, Y. Z. Zhang, Z. Z. Ye, L. Wang, B. H. Zhao, and J. Y. Huang, p-type ZnO films deposited by DC reactive magnetron sputtering at different ammonia concentrations, Mater. Lett. 57, 3311-3314 (2003).
[48] Z. Z. Ye, J. G. Lu, H. H. Chen, Y. Z. Zhang, L. Wang, B. H. Zhao, and J. Y. Huang, Preparation and characteristics of p-type ZnO films by DC reactive magnetron sputtering, J. Cryst. Growth 253, 258-264 (2003).
[49] J. G. Lu, Z. Z. Ye, J. Y. Huang, L. Wang, and B. H. Zhao, Synthesis and properties of ZnO films with (100) orientation by SS-CVD, Appl. Surf. Sci. 207, 295-299 (2003).
[50] J. G. Lu, Z. Z. Ye, L. Wang, B. H. Zhao, and J. Y. Huang, Preparation and properties of N-doped p-type ZnO films by solid-source chemical vapor deposition with the c-axis parallel to the substrate, Chin. Phys. Lett. 19, 1494-1497 (2002).

Full Publications
(1) 114 publications, including 88 SCI publications.
(2) More than 1100 times cited by others for SCI publications, including 2 ones with more than 100 times cited.
(3) The publication H-factor is 21.

The publications are not shown here due to the limited pages.

 

Conference List

[1] J. G. Lu, Y. P. Wang, X. Bie, L. Gong, and Z. Z. Ye, Transparent conductive films based on Al-doped ZnO, in the 6th International Workshop on Zinc Oxide and Related Materials (Changchun, China, August 5-7, 2010), p. 168.
[2] J. G. Lu and Z. Z. Ye, Tunable optical properties of quasi-aligned Zn1–xMgxO nanorods, in the 4th International Conference on Technological Advances of Thin Films & Surface Coatings & 1st International Conference on NanoManufacturing (Singapore, 13-16 July 2008), ID: 4787.
[3] J. G. Lu and S. Fujita, Junction Properties of Nitrogen-doped ZnO Thin Films, in the 34th International Symposium on Compound Semiconductors (ISCS 2007) (Kyoto, Japan, October 15-18, 2007), P. WeC I-3.
[4] J. G. Lu and S. Fujita, Hydrogen-assisted nitrogen-acceptor doping in ZnO, in the 2007 European Materials Research Society (E-MRS) Spring Meeting (Strasbourg, France, May 28-June 1, 2007), P. I-1a 6.
[5] J. G. Lu, Z. Z. Ye, Y. J. Zeng, F. Zhuge, B. H. Zhao, J. Y. Huang, and L. P. Zhu, N–Al codoping technique: a promising candidate for producing good p-type ZnO, in the 21st International Conference on Amorphous and Nanocrystalline Semiconductors (ICANS 21) (Lisbon, Portugal, September 2005), P. 16.
[6] Z. Z. Ye, J. G. Lu, D. W. Ma, Y. J. Zeng, F. Zhuge, B. H. Zhao, and L. P. Zhu, Effect of homo-buffer layer on the properties of N-Al codoped p-type ZnO thin films, in the 3rd International Workshop on ZnO and Related Materials (Sendai, Japan, October 2004), P. 1-14.
[7] Jianguo Lu, Zhizhen Ye, Wang Lei, and Binghui Zhao, Synthesis of p-Type ZnO Films with Parallel Orientation by Solid-Source Chemical Vapor Deposition, in the 2nd International Workshop on Zinc Oxide (Dayton, Ohio, USA, October 2002), P. 36.
[8] Jianguo Lu, Zhizhen Ye, Hanhong Chen, Jingyun Huang, Lei Wang, and Binghui Zhao, Hetero-Growth of (100) Orientated ZnO Films on Silicon by SS-CVD, IUMRS- ICEM2002 (Xi’an, China, June 2002), P. 192.
 

Patent List

[1] Z. Z. Ye, L. Q. Zhang, J. G. Lu, H. P. He, L. P. Zhu, and Y. Z. Zhang, A growth method of Non-polar ZnO crystalline thin films, State Intellectual Property Office of P.R. China (authorized on October 25, 2010), authorized No. ZL 2010 1 0164207.7.
[2] Z. Z. Ye, Y. J. Zeng, J. G. Lu, L. P. Zhu, and B. H. Zhao, A Li-doping technique for preparation of p-type ZnO thin films, State Intellectual Property Office of P.R. China (authorized on July 25, 2007), authorized No. ZL 2005 1 0061274.2.
[3] J. G. Lu, Z. Z. Ye, Y. Z. Zhang, Y. J. Zeng, L. P. Zhu, and B. H. Zhao, A Li-N dual-doping technique for preparation of p-type ZnO thin films, State Intellectual Property Office of P.R. China (authorized on May 16, 2007), authorized No. ZL 2005 1 0061273.8.
[4] Z. Z. Ye, J. G. Lu, F. Zhuge, and B. H. Zhao, A deposition method for N-Al codoped p-type ZnO crystal films using a two-step approach, State Intellectual Property Office of P.R. China (authorized on January 3, 2007), authorized No. 2004 1 0067004.8.
[5] Zhizhen Ye, Jianguo Lu, Jingyun Huang, Yinzhu Zhang, and Lu Zou, ZnO-based homojunction light emitting diodes, State Intellectual Property Office of P.R. China (authorized on April 13, 2005), authorized No. ZL 02 1 36640.3.
[6] Zhizhen Ye, Guodong Yuan, Jingyun Huang, Yujia Zeng, Jianguo Lu, and Dewei Ma, ZnO-based homojunction light emitting diodes, State Intellectual Property Office of P.R. China (authorized on March 16, 2005), authorized No. ZL 2003 2 0108959.4.
[7] Zhizhen Ye, Jianguo Lu, Hanhong Chen, and Binghui Zhao, A method of solid-source chemical vapor deposition as a novel deposition technique for ZnO films, State Intellectual Property Office of P.R. China (authorized on December 29, 2004), authorized No. ZL 02 1 36640.0.
[8] Zhizhen Ye, Jianguo Lu, Zhang Yinzhu, and Huang Jingyun, A kind of light emitting diodes, State Intellectual Property Office of P.R. China (authorized on September 3, 2003), authorized No. ZL 02 2 66541.2.