Sheng Kuang

Professor, School of Electrical Engineering

 

Phone: +86 571 8795 2234
Fax: +86 571 8795 1345
Email: shengk@zju.edu.cn
Office: Dian Gong Chang Building

Zhejiang University, Yuquan Campus
38 Zheda Road
Hangzhou, China 310027

 

Professional Activities

Associate Editor, IEEE Transactions on Power Electronics
Associate Editor, IEEE Transactions on Industrial Applications
Senior Member, IEEE
Reviewer and panelist, National Science Foundation (NSF, USA)

 

Education

Ph.D. – Heriot-Watt University, Computing and Electrical Engineering, 1999
B.S. – Zhejiang University, Electrical Engineering, 1995

Working Experience

2010-, Professor, School of Electrical Engineering, Zhejiang University
2008-2009, Associate Professor (Tenured), Department of Electrical and Computer Engineering, Rutgers University
2002-2008, Assistant Professor, Department of Electrical and Computer Engineering, Rutgers University
1999-2002, Postdoctoral Research Associate, Engineering Department, Cambridge University

 

Awards and Honors

? Zhejiang Overseas Talents, 2011
? Outstanding Young Scientist Award of Zhejiang Province, 2010
? Zhejiang Provincial Natural Science Academic Award, 2010
? International Reliablility Physics Symposium Outstanding Paper Award, 2009
? Best Student Poster Award Nomination, International Semiconductor Device Research Symposium, 2007
 

Research Interests

Power Semiconductor Devices
Power Integrated Circuits
Power Electronics

 

Current Projects

  1. “Researches and applications of new power device with high voltage and large capacity”, National High Technology Research and Development Program, 2011-2013
  2. "IGBT based high-speed locomotive technology of high pressure", National Science and Technolgy major Projects, 2011-2013
  3. "SiC Power Intergrated Circuit" , Doctoral Program of Higher Research Fund, 2011-2013
  4. "Key Technologies Research of Silicon Carbide Power Diodes" , National Natural Science Fundation of China, 2010-2011
  5. "Testing and Comparison Research of New Electroinc Devices" , Delta Fundation of China, 2010-2012
  6. “Silicon Carbide Power Electronic Devices” , Zhejiang Province Outstand Youth Fund, 2011-2013

Publication List

Recent Publications
 

  1. J.P. Campbell, K.P. Cheung, L. Yu, J.S. Suehle, A. Oates, K. Sheng, “Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors”, IEEE Electron Device Letters, Vol. 32, No. 1, 2011, pp. 75-77
  2. L. Yu, G. T. Dunne, K. S. Matocha, K. P. Cheung, J. S. Suehle, and K. Sheng, “Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments”, IEEE Transactions on Device and Materials Reliability, Vol. 10, No. 4, December 2010, pp. 418-426
  3. L. Yu, K.P. Cheung, V. Tilak, G. Dunne, K. Matocha, J.P. Campbell, J.S. Suehle and K. Sheng, “Wafer-level Hall Measurement on SiC MOSFET”, Materials Science Forum, Vols 645-648, 2010, pp. 979-982
  4. L. Yu, K.P. Cheung, G. Dunne, K. Matocha, J.S. Suehle and K. Sheng, “Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices”, Materials Science Forum, Vols 645-648, 2010, pp. 805-808
  5. Z. Qian, K. Sheng，“Development and Future of High Power Semiconductor Devices”, High Power Conversion Technology, No. 1, 2010, pp. 1-9
  6. K. Sheng, ‘Maximum Junction Temperature of SiC Power Devices’, IEEE Transactions on Electron Devices, Vol. 56, No. 2, 2009, pp. 337-342
  7. L. Yu, K.P. Cheung, J.S. Suehle, J.P. Campbell, K. Sheng, A.J. Lelis, S.H Ryu, ‘Channel Hot-Carrier Effect of 4H-SiC MOSFET’, Material Science Forum, Vols. 615-617, 2009, pp 813-816
  8. K. Sheng, Y. Zhang, M. Su, L. Yu and J.H. Zhao, ‘High Frequency Switching of SiC High Voltage LJFET’, IEEE Transactions on Power Electronics, Vol. 24, No. 1, 2009, pp. 271-277
  9. Y. Zhang, X. Hu, J. H. Zhao, K. Sheng, W. R. Cannon, X. Wang and L. Fursin, 'Rheology and thermal conductivity of diamond powder filled liquid epoxy encapsulants for electronic packaging', IEEE Transactions on Packaging, Vol. 32, No. 4, 2009, pp. 716 - 723
  10. Y. Zhang, K. Sheng, M. Su, J.H. Zhao, P. Alexandrov and L. Fursin, ‘Development of High Temperature Lateral HV and LV JFETs in 4H-SiC’, Material Science Forum, Vols. 600-603, 2009, pp. 1091-1094
  11. K. Sheng, Y. Zhang, M. Su, J.H. Zhao, X. Li, P. Alexandrov and L. Fursin, “Demonstration of the First SiC Power Integrated Circuit”, International Journal of Solid-State Electronics, Vol. 52, No. 10, 2008, pp. 1636-1646
  12. L. Yu and K. Sheng, “Modeling and Design of a Monolithically Integrated Power Converter on SiC”, International Journal of Solid-State Electronics, Vol. 52, No. 10, 2008, pp. 1625-1630
  13. L. Yu, and K. Sheng, ‘Modeling and Optimal Device Design for 4H-SiC Super-Junction Devices’, IEEE Transactions on Electron Devices, Vol. 55, No. 8, 2008, pp. 1961-1969
  14. Y. Zhang, K. Sheng, M. Su, J.H.. Zhao, P. Alexandrov, X. Li, L. Fursin and M. Weiner, ‘Development of 4H-SiC LJFET Based Power IC’, IEEE Transactions on Electron Devices, Vol. 55, No. 8, 2008, pp. 1934-1945
  15. J.H. Zhao, K. Sheng, Y. Zhang, and M. Su, “Current Status and Future Prospects of SiC Power JFETs and ICs”, IEICE Transaction on Electronics, Vol. E91-C, No. 7, 2008, pp. 1031-1041
  16. Y. Zhang, K. Sheng, M. Su, J. H. Zhao, P. Alexandrov and L. Fursin, ‘1000V, 9.1mΩ?cm2 Normally-Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuits Application’, IEEE Electron Device Lett., Vol. 28, No. 5, May 2007, pp. 404-407
  17. M. Su, K. Sheng, Y. Li, Y. Zhang, J. Wu, J. H. Zhao, J. Zhang, L. X. Li, ‘430-V 12.4-mΩ?cm2 Normally off 4H-SiC Lateral JFET’, IEEE Electron Device Lett., vol.27, No. 10, Oct. 2006, pp. 834- 836.
  18. K. Sheng, L. Yu, J. Zhang and J.H. Zhao, ‘High Temperature Characterization of SiC BJTs for Power Switching Applications’, International Journal of Solid-State Electronics, Volume 50, No. 6, 2006, pp. 1073-1079
  19. L. Yu and K. Sheng, ‘Breaking the theoretical limit of SiC unipolar power device - a simulation study’, International Journal of Solid-State Electronics, Volume 50, No. 6, 2006, pp. 1062-1072
  20. J.H. Zhao, P. Alexandrov, Y. Li, X. Li, K. Sheng and R. Lebron-Velilla, ‘Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs’, Material Science Forum, Vols. 527-529, 2006, pp. 1191-1194
  21. J. Zhang, J. Wu, P. Alexandrov, T. Burke, K. Sheng and J.H. Zhao, ‘1836 V, 4.7 mW?cm2 High Power 4H-SiC Bipolar Junction Transistor’, Material Science Forum, Vols. 527-529, 2006, pp. 1417-1420
  22. J.P. Campbell, K.P. Cheung, L. Yu, J.S. Suehle, K. Sheng, A. Oates, “New Methods for the Direct Extraction of Mobility and Series Resistance from a Single Ultra-Scaled Device”, Digest of Technical Papers - Symposium on VLSI Technology, 2010, pp. 75-76
  23. L.C. Yu, K.P. Cheung, V. Tilak, G. Dunne, K. Matocha, J.P. Campbell, J.S. Suehle and K. Sheng, ‘Demonstration of a Wafer-level Hall-Mobility Measurement Technique’, 40th IEEE Semiconductor Interface Specialists Conference, 2009, p.27-30
  24. L.C. Yu, K.P. Cheung, V. Tilak, G. Dunne, K. Matocha, J.P. Campbell, J.S. Suehle and K. Sheng, ‘Wafer-level Hall Measurement on SiC MOSFET’, 13th International Conference on Silicon Carbide and Related Materials (ICSCRM), Fr-1A-5, 2009
  25. L.C. Yu, K.P. Cheung, G. Dunne, K. Matocha, J.S. Suehle and K. Sheng, ‘Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices’, 13th International Conference on Silicon Carbide and Related Materials (ICSCRM), We-P-60, 2009
  26. L.C. Yu, K.P. Cheung, V. Tilak, G. Dunne, K. Matocha, J.P. Campbell, J.S. Suehle and K. Sheng, ‘A Fast, Simple Wafer-level Hall-Mobility Measurement Technique’, IEEE International Integrated Reliability Workshop Final Report, 2009, pp. 73-76
  27. K. Sheng, R. Radhakrishnan, Y. Zhang and J.H. Zhao, ‘A Vertical SiC JFET with a Monolithically Integrated JBS Diode’, Proceedings of International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2009, pp. 255-258
  28. K. Sheng, Y. Zhang, L. Yu and J. H. Zhao, ‘Design of High Temperature SiC LJFET-Based Logic Inverter and Integrated Gate Driver’, Proceedings of International Power Electronics and Motor Control Conference, 2009, pp. 302-306
  29. S. Pyo and K. Sheng, ‘Junction Temperature Dynamics of Power MOSFET and SiC Diode’, Proceedings of International Power Electronics and Motor Control Conference, 2009, pp. 269-273
  30. J.P. Campbell, L. Yu, K.P. Cheung, J. Qin, J.S. Suehle, A. Oates, K. Sheng, ‘Large Random Telegraph Noise in Sub-Threshold Operation of Nano-Scale nMOSFETs’, Proceedings of International Conference on IC Design and Technology, 2009, pp. 17-20
  31. J.P. Campbell, J. Qin, K.P. Cheung, L. Yu, J.S. Suehle, A. Oates, K. Sheng, ‘Random Telegraph Noise in Highly Scaled nMOSFETs’, IEEE International Reliability Physics Symposium, 2009, pp. 382-388
  32. L. Yu, K.P. Cheung, J. Campbell, J.S. Suehle and K. Sheng, ‘Oxide Reliability of SiC MOS Devices’, IEEE Int. Integrated Rel. Workshop Final Report, 2008, pp. 141-144
  33. J.P. Campbell, J. Qin, K.P. Cheung, L. Yu, J.S. Suehle, A. Oates, K. Sheng, ‘The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs’, IEEE Int. Integrated Rel. Workshop Final Report, 2008, pp. 105-109
  34. L. Yu, K.P. Cheung, J. Suehle, J. Campbell, K. Sheng, A. Lelis, S.H. Ryu, ‘Channel Hot-Carrier Effect of 4H-SiC MOSFET’, European Conference on Silicon Carbide and Related Materials (ECSCRM), We-1-5, 2008
  35. K. Sheng, L. Yu, Y. Zhang, M. Su and J.H. Zhao, ‘High Frequency Switching of SiC High Voltage LJFET’, Proceedings of International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2008, pp. 229-232
  36. L. Yu, K. Sheng and J.H. Zhao, ‘Modeling and Design of a Monolithically Integrated Power Converter on SiC,’ International Semiconductor Device Research Symposium, 2007, pp. 660-661
  37. J. H. Zhao, Y. Zhang, M. Su, K. Sheng, P. Alexandrov and L. Fursin, ‘Demonstration of the First Power IC on 4H-SiC,’ International Semiconductor Device Research Symposium, 2007, pp. 240-241
  38. Y. Zhang, K. Sheng, M. Su, J. H. Zhao, P. Alexandrov and L. Fursin, ‘Development of High Temperature Lateral HV and LV JFETs in 4H-SiC,’ International Conference on Silicon Carbide and Related Materials (ICSCRM), 2007, Th-P-70
  39. L. Yu and K. Sheng, ‘An Analytical Model for 4H-SiC Super Junction Devices’, Proceedings of the International Power Electronics and Motor Control Conference (IPEMC’06), August, 2006, pp. 1188-1191
  40. Tang.J, Wang.X, Wang.L, Cao.S, Wang.Z, Gao.J, Sheng.K, ‘Some applications of the high-mode-merging method’，PIERS 2006 Cambridge - Progress in Electromagnetics Research Symposium, Proceedings, p 347-351, 2006
  41. J.H. Zhao, K. Sheng and R. Lebron-Velilla, ‘Silicon Carbide Schottky Barrier Diode’, International Journal of High Speed Electronics and Systems (IJHSES), 2005, pp. 821-866
  42. P. Sannuti, X. Li, F.Yan, K. Sheng and J.H.Zhao, ‘Channel Electron Mobility in 4H-SiC Lateral Junction Field Effect Transistors’, International Journal of Solid-State Electronics, Volume 49, No. 12, December, 2005, pp. 1900-1904
  43. K. Sheng and S. Hu, ‘Design Criteria of High-Voltage Lateral RESURF JFETs on 4H-SiC, IEEE Transactions on Electron Devices, Volume 52, No. 10, October, 2005, pp. 2300-2308
  44. S. Hu and K. Sheng ‘A new edge termination technique for 4H-SiC power devices’, International Journal of Solid-State Electronics, Volume 48, No. 10-11, 2004, pp. 1861-1866
  45. U.N.K. Udugampola, R.A. McMahon, F. Udrea, K. Sheng, G.A.J. Amaratunga, E.M.S. Narayanan, S. Hardikar and M.M. De Souza, ‘Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits’, IEE Proceedings-Circuits, Devices and Systems, Volume 151, No. 3, 17 June 2004, pp. 203-6
  46. Y. Yokoyama, X. Li, K. Sheng, A. Mihaila, T. Traikovic, F. Udrea, G.A.J. Amaratunga and K. Okano, ‘A field effect transistor using highly nitrogen-doped CVD diamond for power device applications’, Applied Surface Science, Volume 216, 2003, pp. 483-489
  47. F. Udrea, U.N.K. Udugampola, K. Sheng, R.A. McMahon, G.A.J. Amaragunga, E.M.S. Narayanan, M.M. De Souza and S. Hardikar, ‘Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor (DG-ILET)’, IEEE Electron Device Letters, Volume 23, No. 12, 2002, pp. 725-727
  48. S. Huang, G.A.J. Amaratunga, F. Udrea, K. Sheng, P. Waind and P. Talor, ‘A Dual-Channel IEGT,’ Microelectronics Journal, Volume 32, No. 9, 2001, pp. 755-761
  49. D.M. Garner, F. Udrea, H.T. Lim, G. Ensell, A.E. Popescu, K. Sheng and W.I. Milne, 'Silicon-on-insulator power integrated circuits', Microelectronics Journal, Volume 32, No. 5-6, 2001, pp. 517-526
  50. S. Huang, K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘A dynamic n-buffer insulated gate bipolar transistor’, International Journal of Solid-State Electronics, Volume 45, No. 1, 2001, pp. 173-182
  51. X. He, Y. Yang, K. Sheng, B.W. Williams and S.J. Finney, ‘Composite soft switching configuration for inverters using bridge leg modules’, Journal of Electronics, Vol. 18, No. 1, pp. 61-69
  52. X. He, K. Sheng, B.W. Williams, Z. Qian and S.J. Finney, ‘A composite soft-switching inverter configuration with unipolar pulse width modulation control’, IEEE Transactions on Industrial Electronics, Volume 48, No. 1, 2001, pp. 118-126
  53. K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘Optimum carrier distribution of the IGBT’, Solid-State of Electronics, Volume 44, No. 9, 2000, pp. 1573-1583
  54. K. Sheng, S.J. Finney and B.W. Williams, 'A review on IGBT models', IEEE Transactions on Power Electronics, Volume 15, No. 6, 2000, pp. 1250-1266
  55. X. He, K. Sheng, S.J. Finney, Z. Qian and B.W. Williams, 'New soft switching techniques for three phase voltage source inverters', International Journal of Electronics, Volume 87, No. 5, 2000, pp. 605-622
  56. F. Udrea, D. Garner, K. Sheng, A. Popescu, H. T. Lim and W.I. Milne, 'SOI power devices', IEE Electronics & Communication Engineering Journal, Volume 12, No. 1, 2000, pp. 27-40
  57. K. Sheng, S.J. Finney and B.W. Williams, 'Thermal stability of IGBT high frequency operation', IEEE Transactions on Industrial Electronics, Volume 47, No. 1, 2000, pp. 9-16
  58. K. Sheng, S.J. Finney and B.W. Williams, 'A new analytical IGBT model with improved electrical characteristics', IEEE Transactions on Power Electronics, Volume 14, No. 1, 1999, pp. 98-107
  59. N. McNeill, K. Sheng, B.W. Williams and S.J. Finney 'Assessment of off-State negative gate voltage requirements for IGBTs', IEEE Transactions on Power Electronics, Volume 13, No. 3, 1998, pp. 436-440
  60. K. Sheng, B.W. Williams and S.J. Finney, 'Maximum operating junction temperature of PT and NPT IGBTs', IEE Electronics Letters, Nov 12 1998, Volume 34, No. 23, pp. 2276-2277
  61. K. Sheng, S.J. Finney and B.W. Williams, 'Fast and accurate IGBT model for PSpice', Electronics Letters, Volume 32, No. 25, 1996, pp. 2294-2295
  62. K. Sheng, L. Yu, J. Zhang and J.H. Zhao, ‘High Temperature Characterization of SiC BJTs for Power Switching Applications’ International Semiconductor Device Research Symposium, 2005, pp. 168-169
  63. J.H. Zhao, J. Zhang, X. Li and K Sheng, ‘Effect of graded base doping on the gain of SiC BJT’, International Semiconductor Device Research Symposium, 2005, pp. 398-399
  64. K. Sheng, J.H. Lee, P. Alexandrov and J.H. Zhao, ‘Characterization and application of SiC TI-VJFETs’, International Semiconductor Device Research Symposium, 2005, pp. 296-297
  65. L. Yu and K. Sheng, ‘Breaking the theoretical limit of SiC unipolar power device - a simulation study’, International Semiconductor Device Research Symposium, 2005, pp. 42-43
  66. J.S. Lai, H. Yu, J. Zhang, P. Alexandrov, Y. Li, J.H. Zhao, K. Sheng and A. Hefner, ‘Characterization of normally-off SiC vertical JFET devices and inverter circuits’, Industry Applications Conference, 2005, pp. 404-409
  67. Y. Wang, K. P. Cheung, K. Sheng, C.S. Pai, ‘A new low-cost MEMS capacitive pressure sensor concept’, Proceedings of SPIE - The International Society for Optical Engineering, Volume 5592, Nanofabrication: Technologies, Devices, and Applications, 2005, pp. 313-319
  68. S. Hu, K. Sheng, ‘A study of oxide reliability limitation on different field plate based termination techniques for SiC power devices’, Proceedings of the International Power Electronics and Motor Control Conference (IPEMC’04), August, 2004, pp. 868-872
  69. K. Sheng, ‘A MOS-Controlled Diode (MCD) for Power Integrated Circuits’, Proceedings of the International Power Electronics and Motor Control Conference (IPEMC’04), August, 2004, pp. 863-867
  70. J. H. Zhao, K. Tone, K. Sheng, X. Li, P. Alexandrov, L. Fursin, M. Weiner, T. Burke, ‘A High Performance 4H-SiC Normally-off VJFET’, Proceedings of the International Power Electronics and Motor Control Conference (IPEMC’04), 2004, pp. 342-346
  71. S. Hu, K. Sheng, ‘A New Edge Termination Technique for SiC Power Devices’, Proceedings of the International Semiconductor Device Research Symposium (ISDRS), Washington DC, 2003, pp. 122-123
  72. K. Sheng, ‘MOS-Controlled Diode (MCD) on Silicon-On-Insulator (SOI), Proceedgins of the 29th Annual Conference of the IEEE Industrial Electronics Society, IECON, Roanoke, USA, 2003, pp. 2602-2606
  73. U.N.K. Udugampol, R.A. McMahon, F. Udrea, K. Sheng, G.A.J. Amaratunga, E.M.S. Narayanan, S. Hardikar and M.M. De Souza, ‘Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits’, Proceedings of International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2003, pp. 216 –219
  74. P. Sannuti, X. Li, F. Yan, K. Sheng, J. H. Zhao, ‘Channel Mobility Study of 4H-SiC Lateral JFET’, 17th Annual Symposium Laboratory For Surface Modification, 2003
  75. U.N.K. Udugampola, G.F.W. Khoo, K. Sheng, R.A. McMahon, F. Udrea and G.A.J. Amaratunga, ‘Characterisation of dual gate lateral inversion layer emitter transistor’, International Conference on Power Electronics Machines and Drives, Bath, UK, 2002, pp. 557-561
  76. K. Sheng, U.N.K. Udugampola, G.F. Khoo, F. Udrea, G.A.J. Amaratunga, R.A. McMahon, E.M.S. Narayanan and S. Hardikar, ‘Dual Gate Lateral Inversion Layer Emitter Transistor’, IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Santa Fe, USA, 2002, pp. 37-40
  77. G. A. J. Amaratunga, R. Ng, K. Sheng, T. Trajkovic, F. Udrea, MOSFETS for POWER ICS: Present Status and Future Development, invited paper, Proceedings of the 10th EPE-PEMC Conference, Cavtat & Dubrovnik – Croatia, 2002
  78. R. Ng, K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘Lateral unbalanced Super Junction (USJ)/3D-RESURF for high breakdown voltage on SOI’, IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Osaka, Japan, 2001, pp. 395-398
  79. D. Garner, F. Udrea, G. Ensell, K. Sheng and G.A.J. Amaratunga, ‘Failure mechanisms of SOI high-voltage LIGBTs and LDMOSes under unclamped inductive switching’, IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Osaka, Japan, 2001, pp. 335-338
  80. A. Popescue, F. Udrea, K. Sheng, D. Garner, H.T. Lim, R. Ng, G. Khoo and W. Milne, ‘Advanced RESURF concepts in SOI devices – optimization and fabrication’, Silicon-on-Insulator Technology and Devices X, Proceedings of the Tenth International Symposium (Electrochemical Society Proceedings Vol.2001-3), Electrochem. Soc., Washington, DC, 2001, pp. 325-330
  81. A. Mumtaz*, K. Sheng, D. Garner, G. Khoo, T. Wilmhurst, F. Udrea, M. Rahimo, D. Hinchley, R.A. McMahon and G.A.J. Amaratunga, ‘Towards a single chip photovoltaic inverter for grid connected systems’, Regional World Renewable Energy Congress and The 7th Arab Conference on Solar Energy, Sharjah, UAE, 2001
  82. K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘Unconventional Behaviour of CoolMOS’, European Solid-State Device Researc Conference, Nuremberg, Germany, 2001, pp 251-254
  83. K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘A Novel Double Gate AC Switch’, European Solid-State Device Researc Conference, Nuremberg, Germany, 2001, pp. 407-410
  84. A. Mihaila, F. Udrea, K. Sheng and R. Azar, ‘Mixed-mode investigation of hybrid sic/si cascode configurations’, ISDRS’2001, Washington, U.S.A., Nov. 2001, pp. 575-578
  85. R. Ng, F. Udrea, K. Sheng, G.A.J. Amaratunga, ‘A study of the CoolMOS integral diode: analysis and optimisation’, 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547). IEEE. Volume 2, 2001, pp. 461-464
  86. K. Sheng, F. Udrea, G.A.J. Amaratunga, ‘Optimum carrier distribution of the IGBT’, Proceedings of EPE-PEMC, Kosice, Slovak Republic, 2000, Volume 3, pp. 209-215
  87. K. Sheng, F. Udrea, T. Trajkovic, S.M. Huang, G.A.J. Amaratunga and P. Waind, ‘PT and NPT IGBTs up to 1.2kV - which is optimum?’, Proceedings of EPE-PEMC, Kosice, Slovak Republic, 2000, Volume 3, pp. 204-208
  88. K. Sheng, S. M. Huang, F. Udrea and G.A.J. Amaratunga, ‘Quasi-punch-through structure for power semiconductor devices’, Proceedings of the Third International Conference on Power Electronics and Motion Control, Beijing, China, 2000, pp. 224-228
  89. S.M. Huang, K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘Investigation of IGBT blocking characteristics’, Proceedings of the Third International Conference on Power Electronics and Motion Control, Beijing, China, 2000, pp. 407-411
  90. D.M. Garner, F. Udrea, H.T. Lim, G. Ensell, A.E. Popescu, K. Sheng and W.I. Milne, ‘Silicon on Insulator Power Integrated Circuits’, ISPS’2000, Prague, Czech Republic, pp. 123-129
  91. K. Sheng, B.W. Williams, X. He and Z. Qian, ‘Measurement of IGBT switching frequency limit’, Proceedings of Power Electronics Specialists Conference, Charleston, USA, 1999, pp. 375-379
  92. X. He, B.W. Williams, K. Sheng, S.J. Finney and Z. Qian, ‘A composite soft switching circuit for power inverters’, Proceedings of Applied Power Electronics Conference, Dallas, USA, 1999, pp. 1272-1278
  93. H. T. Lim, F. Udrea, D. Garner, K. Sheng, and W. I. Milne, ‘Partial SOI LDMOSFETs for high-side switching’, Proceedings of the International Semiconductor Conference, CAS, Sinaia, Romania, 1999, pp. 376-380
  94. K. Sheng, S.J. Finney and B.W. Williams, ‘An improved understanding of IGBT forward conduction’, Proceedings of the Second International Conference on Power Electronics and Motion Control, Hangzhou, China, 1997, Volume 1, pp. 48-55
  95. K. Sheng, S.J. Finney, B.W. Williams, X. N. He and Z. M. Qian, ‘IGBT switching losses’, Proceedings of the Second International Conference on Power Electronics and Motion Control, Hangzhou, China, 1997, Volume 1, pp. 274-277

Patent List

2003, Bi-directional semiconductor switch, UK patent #GB2380604A
2010, Voltage-sharing method for series connection of high frequency power electronic devices, CN101860201A 201010163716.5
2010, Voltage-sharing method for series connection of high frequency power electronic devices, CN201674394U 201020180204.5
2011, An insulated gate bipolar transistor, CN201838596U 201020590611.3