Sheng Kuang

Professor, School of Electrical Engineering
Phone: | +86 571 8795 2234 |
Fax: | +86 571 8795 1345 |
Email: | shengk@zju.edu.cn |
Office: | Dian Gong Chang Building |
Zhejiang University, Yuquan Campus
38 Zheda Road
Hangzhou, China 310027
Professional Activities
Associate Editor, IEEE Transactions on Power Electronics
Associate Editor, IEEE Transactions on Industrial Applications
Senior Member, IEEE
Reviewer and panelist, National Science Foundation (NSF, USA)
Education
Ph.D. – Heriot-Watt University, Computing and Electrical Engineering, 1999
B.S. – Zhejiang University, Electrical Engineering, 1995
Working Experience
2010-, Professor, School of Electrical Engineering, Zhejiang University
2008-2009, Associate Professor (Tenured), Department of Electrical and Computer Engineering, Rutgers University
2002-2008, Assistant Professor, Department of Electrical and Computer Engineering, Rutgers University
1999-2002, Postdoctoral Research Associate, Engineering Department, Cambridge University
Awards and Honors
? Zhejiang Overseas Talents, 2011
? Outstanding Young Scientist Award of Zhejiang Province, 2010
? Zhejiang Provincial Natural Science Academic Award, 2010
? International Reliablility Physics Symposium Outstanding Paper Award, 2009
? Best Student Poster Award Nomination, International Semiconductor Device Research Symposium, 2007
Research Interests
Power Semiconductor Devices
Power Integrated Circuits
Power Electronics
Current Projects
- “Researches and applications of new power device with high voltage and large capacity”, National High Technology Research and Development Program, 2011-2013
- "IGBT based high-speed locomotive technology of high pressure", National Science and Technolgy major Projects, 2011-2013
- "SiC Power Intergrated Circuit" , Doctoral Program of Higher Research Fund, 2011-2013
- "Key Technologies Research of Silicon Carbide Power Diodes" , National Natural Science Fundation of China, 2010-2011
- "Testing and Comparison Research of New Electroinc Devices" , Delta Fundation of China, 2010-2012
- “Silicon Carbide Power Electronic Devices” , Zhejiang Province Outstand Youth Fund, 2011-2013
Publication List
Recent Publications
- J.P. Campbell, K.P. Cheung, L. Yu, J.S. Suehle, A. Oates, K. Sheng, “Geometric Magnetoresistance Mobility Extraction in Highly Scaled Transistors”, IEEE Electron Device Letters, Vol. 32, No. 1, 2011, pp. 75-77
- L. Yu, G. T. Dunne, K. S. Matocha, K. P. Cheung, J. S. Suehle, and K. Sheng, “Reliability Issues of SiC MOSFETs: A Technology for High-Temperature Environments”, IEEE Transactions on Device and Materials Reliability, Vol. 10, No. 4, December 2010, pp. 418-426
- L. Yu, K.P. Cheung, V. Tilak, G. Dunne, K. Matocha, J.P. Campbell, J.S. Suehle and K. Sheng, “Wafer-level Hall Measurement on SiC MOSFET”, Materials Science Forum, Vols 645-648, 2010, pp. 979-982
- L. Yu, K.P. Cheung, G. Dunne, K. Matocha, J.S. Suehle and K. Sheng, “Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices”, Materials Science Forum, Vols 645-648, 2010, pp. 805-808
- Z. Qian, K. Sheng,“Development and Future of High Power Semiconductor Devices”, High Power Conversion Technology, No. 1, 2010, pp. 1-9
- K. Sheng, ‘Maximum Junction Temperature of SiC Power Devices’, IEEE Transactions on Electron Devices, Vol. 56, No. 2, 2009, pp. 337-342
- L. Yu, K.P. Cheung, J.S. Suehle, J.P. Campbell, K. Sheng, A.J. Lelis, S.H Ryu, ‘Channel Hot-Carrier Effect of 4H-SiC MOSFET’, Material Science Forum, Vols. 615-617, 2009, pp 813-816
- K. Sheng, Y. Zhang, M. Su, L. Yu and J.H. Zhao, ‘High Frequency Switching of SiC High Voltage LJFET’, IEEE Transactions on Power Electronics, Vol. 24, No. 1, 2009, pp. 271-277
- Y. Zhang, X. Hu, J. H. Zhao, K. Sheng, W. R. Cannon, X. Wang and L. Fursin, 'Rheology and thermal conductivity of diamond powder filled liquid epoxy encapsulants for electronic packaging', IEEE Transactions on Packaging, Vol. 32, No. 4, 2009, pp. 716 - 723
- Y. Zhang, K. Sheng, M. Su, J.H. Zhao, P. Alexandrov and L. Fursin, ‘Development of High Temperature Lateral HV and LV JFETs in 4H-SiC’, Material Science Forum, Vols. 600-603, 2009, pp. 1091-1094
- K. Sheng, Y. Zhang, M. Su, J.H. Zhao, X. Li, P. Alexandrov and L. Fursin, “Demonstration of the First SiC Power Integrated Circuit”, International Journal of Solid-State Electronics, Vol. 52, No. 10, 2008, pp. 1636-1646
- L. Yu and K. Sheng, “Modeling and Design of a Monolithically Integrated Power Converter on SiC”, International Journal of Solid-State Electronics, Vol. 52, No. 10, 2008, pp. 1625-1630
- L. Yu, and K. Sheng, ‘Modeling and Optimal Device Design for 4H-SiC Super-Junction Devices’, IEEE Transactions on Electron Devices, Vol. 55, No. 8, 2008, pp. 1961-1969
- Y. Zhang, K. Sheng, M. Su, J.H.. Zhao, P. Alexandrov, X. Li, L. Fursin and M. Weiner, ‘Development of 4H-SiC LJFET Based Power IC’, IEEE Transactions on Electron Devices, Vol. 55, No. 8, 2008, pp. 1934-1945
- J.H. Zhao, K. Sheng, Y. Zhang, and M. Su, “Current Status and Future Prospects of SiC Power JFETs and ICs”, IEICE Transaction on Electronics, Vol. E91-C, No. 7, 2008, pp. 1031-1041
- Y. Zhang, K. Sheng, M. Su, J. H. Zhao, P. Alexandrov and L. Fursin, ‘1000V, 9.1mΩ?cm2 Normally-Off 4H-SiC Lateral RESURF JFET for Power Integrated Circuits Application’, IEEE Electron Device Lett., Vol. 28, No. 5, May 2007, pp. 404-407
- M. Su, K. Sheng, Y. Li, Y. Zhang, J. Wu, J. H. Zhao, J. Zhang, L. X. Li, ‘430-V 12.4-mΩ?cm2 Normally off 4H-SiC Lateral JFET’, IEEE Electron Device Lett., vol.27, No. 10, Oct. 2006, pp. 834- 836.
- K. Sheng, L. Yu, J. Zhang and J.H. Zhao, ‘High Temperature Characterization of SiC BJTs for Power Switching Applications’, International Journal of Solid-State Electronics, Volume 50, No. 6, 2006, pp. 1073-1079
- L. Yu and K. Sheng, ‘Breaking the theoretical limit of SiC unipolar power device - a simulation study’, International Journal of Solid-State Electronics, Volume 50, No. 6, 2006, pp. 1062-1072
- J.H. Zhao, P. Alexandrov, Y. Li, X. Li, K. Sheng and R. Lebron-Velilla, ‘Design, Fabrication and Application of 4H-SiC Trenched-and-Implanted Vertical JFETs’, Material Science Forum, Vols. 527-529, 2006, pp. 1191-1194
- J. Zhang, J. Wu, P. Alexandrov, T. Burke, K. Sheng and J.H. Zhao, ‘1836 V, 4.7 mW?cm2 High Power 4H-SiC Bipolar Junction Transistor’, Material Science Forum, Vols. 527-529, 2006, pp. 1417-1420
- J.P. Campbell, K.P. Cheung, L. Yu, J.S. Suehle, K. Sheng, A. Oates, “New Methods for the Direct Extraction of Mobility and Series Resistance from a Single Ultra-Scaled Device”, Digest of Technical Papers - Symposium on VLSI Technology, 2010, pp. 75-76
- L.C. Yu, K.P. Cheung, V. Tilak, G. Dunne, K. Matocha, J.P. Campbell, J.S. Suehle and K. Sheng, ‘Demonstration of a Wafer-level Hall-Mobility Measurement Technique’, 40th IEEE Semiconductor Interface Specialists Conference, 2009, p.27-30
- L.C. Yu, K.P. Cheung, V. Tilak, G. Dunne, K. Matocha, J.P. Campbell, J.S. Suehle and K. Sheng, ‘Wafer-level Hall Measurement on SiC MOSFET’, 13th International Conference on Silicon Carbide and Related Materials (ICSCRM), Fr-1A-5, 2009
- L.C. Yu, K.P. Cheung, G. Dunne, K. Matocha, J.S. Suehle and K. Sheng, ‘Gate Oxide Long-Term Reliability of 4H-SiC MOS Devices’, 13th International Conference on Silicon Carbide and Related Materials (ICSCRM), We-P-60, 2009
- L.C. Yu, K.P. Cheung, V. Tilak, G. Dunne, K. Matocha, J.P. Campbell, J.S. Suehle and K. Sheng, ‘A Fast, Simple Wafer-level Hall-Mobility Measurement Technique’, IEEE International Integrated Reliability Workshop Final Report, 2009, pp. 73-76
- K. Sheng, R. Radhakrishnan, Y. Zhang and J.H. Zhao, ‘A Vertical SiC JFET with a Monolithically Integrated JBS Diode’, Proceedings of International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2009, pp. 255-258
- K. Sheng, Y. Zhang, L. Yu and J. H. Zhao, ‘Design of High Temperature SiC LJFET-Based Logic Inverter and Integrated Gate Driver’, Proceedings of International Power Electronics and Motor Control Conference, 2009, pp. 302-306
- S. Pyo and K. Sheng, ‘Junction Temperature Dynamics of Power MOSFET and SiC Diode’, Proceedings of International Power Electronics and Motor Control Conference, 2009, pp. 269-273
- J.P. Campbell, L. Yu, K.P. Cheung, J. Qin, J.S. Suehle, A. Oates, K. Sheng, ‘Large Random Telegraph Noise in Sub-Threshold Operation of Nano-Scale nMOSFETs’, Proceedings of International Conference on IC Design and Technology, 2009, pp. 17-20
- J.P. Campbell, J. Qin, K.P. Cheung, L. Yu, J.S. Suehle, A. Oates, K. Sheng, ‘Random Telegraph Noise in Highly Scaled nMOSFETs’, IEEE International Reliability Physics Symposium, 2009, pp. 382-388
- L. Yu, K.P. Cheung, J. Campbell, J.S. Suehle and K. Sheng, ‘Oxide Reliability of SiC MOS Devices’, IEEE Int. Integrated Rel. Workshop Final Report, 2008, pp. 141-144
- J.P. Campbell, J. Qin, K.P. Cheung, L. Yu, J.S. Suehle, A. Oates, K. Sheng, ‘The Origins of Random Telegraph Noise in Highly Scaled SiON nMOSFETs’, IEEE Int. Integrated Rel. Workshop Final Report, 2008, pp. 105-109
- L. Yu, K.P. Cheung, J. Suehle, J. Campbell, K. Sheng, A. Lelis, S.H. Ryu, ‘Channel Hot-Carrier Effect of 4H-SiC MOSFET’, European Conference on Silicon Carbide and Related Materials (ECSCRM), We-1-5, 2008
- K. Sheng, L. Yu, Y. Zhang, M. Su and J.H. Zhao, ‘High Frequency Switching of SiC High Voltage LJFET’, Proceedings of International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2008, pp. 229-232
- L. Yu, K. Sheng and J.H. Zhao, ‘Modeling and Design of a Monolithically Integrated Power Converter on SiC,’ International Semiconductor Device Research Symposium, 2007, pp. 660-661
- J. H. Zhao, Y. Zhang, M. Su, K. Sheng, P. Alexandrov and L. Fursin, ‘Demonstration of the First Power IC on 4H-SiC,’ International Semiconductor Device Research Symposium, 2007, pp. 240-241
- Y. Zhang, K. Sheng, M. Su, J. H. Zhao, P. Alexandrov and L. Fursin, ‘Development of High Temperature Lateral HV and LV JFETs in 4H-SiC,’ International Conference on Silicon Carbide and Related Materials (ICSCRM), 2007, Th-P-70
- L. Yu and K. Sheng, ‘An Analytical Model for 4H-SiC Super Junction Devices’, Proceedings of the International Power Electronics and Motor Control Conference (IPEMC’06), August, 2006, pp. 1188-1191
- Tang.J, Wang.X, Wang.L, Cao.S, Wang.Z, Gao.J, Sheng.K, ‘Some applications of the high-mode-merging method’,PIERS 2006 Cambridge - Progress in Electromagnetics Research Symposium, Proceedings, p 347-351, 2006
- J.H. Zhao, K. Sheng and R. Lebron-Velilla, ‘Silicon Carbide Schottky Barrier Diode’, International Journal of High Speed Electronics and Systems (IJHSES), 2005, pp. 821-866
- P. Sannuti, X. Li, F.Yan, K. Sheng and J.H.Zhao, ‘Channel Electron Mobility in 4H-SiC Lateral Junction Field Effect Transistors’, International Journal of Solid-State Electronics, Volume 49, No. 12, December, 2005, pp. 1900-1904
- K. Sheng and S. Hu, ‘Design Criteria of High-Voltage Lateral RESURF JFETs on 4H-SiC, IEEE Transactions on Electron Devices, Volume 52, No. 10, October, 2005, pp. 2300-2308
- S. Hu and K. Sheng ‘A new edge termination technique for 4H-SiC power devices’, International Journal of Solid-State Electronics, Volume 48, No. 10-11, 2004, pp. 1861-1866
- U.N.K. Udugampola, R.A. McMahon, F. Udrea, K. Sheng, G.A.J. Amaratunga, E.M.S. Narayanan, S. Hardikar and M.M. De Souza, ‘Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits’, IEE Proceedings-Circuits, Devices and Systems, Volume 151, No. 3, 17 June 2004, pp. 203-6
- Y. Yokoyama, X. Li, K. Sheng, A. Mihaila, T. Traikovic, F. Udrea, G.A.J. Amaratunga and K. Okano, ‘A field effect transistor using highly nitrogen-doped CVD diamond for power device applications’, Applied Surface Science, Volume 216, 2003, pp. 483-489
- F. Udrea, U.N.K. Udugampola, K. Sheng, R.A. McMahon, G.A.J. Amaragunga, E.M.S. Narayanan, M.M. De Souza and S. Hardikar, ‘Experimental demonstration of an ultra-fast double gate inversion layer emitter transistor (DG-ILET)’, IEEE Electron Device Letters, Volume 23, No. 12, 2002, pp. 725-727
- S. Huang, G.A.J. Amaratunga, F. Udrea, K. Sheng, P. Waind and P. Talor, ‘A Dual-Channel IEGT,’ Microelectronics Journal, Volume 32, No. 9, 2001, pp. 755-761
- D.M. Garner, F. Udrea, H.T. Lim, G. Ensell, A.E. Popescu, K. Sheng and W.I. Milne, 'Silicon-on-insulator power integrated circuits', Microelectronics Journal, Volume 32, No. 5-6, 2001, pp. 517-526
- S. Huang, K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘A dynamic n-buffer insulated gate bipolar transistor’, International Journal of Solid-State Electronics, Volume 45, No. 1, 2001, pp. 173-182
- X. He, Y. Yang, K. Sheng, B.W. Williams and S.J. Finney, ‘Composite soft switching configuration for inverters using bridge leg modules’, Journal of Electronics, Vol. 18, No. 1, pp. 61-69
- X. He, K. Sheng, B.W. Williams, Z. Qian and S.J. Finney, ‘A composite soft-switching inverter configuration with unipolar pulse width modulation control’, IEEE Transactions on Industrial Electronics, Volume 48, No. 1, 2001, pp. 118-126
- K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘Optimum carrier distribution of the IGBT’, Solid-State of Electronics, Volume 44, No. 9, 2000, pp. 1573-1583
- K. Sheng, S.J. Finney and B.W. Williams, 'A review on IGBT models', IEEE Transactions on Power Electronics, Volume 15, No. 6, 2000, pp. 1250-1266
- X. He, K. Sheng, S.J. Finney, Z. Qian and B.W. Williams, 'New soft switching techniques for three phase voltage source inverters', International Journal of Electronics, Volume 87, No. 5, 2000, pp. 605-622
- F. Udrea, D. Garner, K. Sheng, A. Popescu, H. T. Lim and W.I. Milne, 'SOI power devices', IEE Electronics & Communication Engineering Journal, Volume 12, No. 1, 2000, pp. 27-40
- K. Sheng, S.J. Finney and B.W. Williams, 'Thermal stability of IGBT high frequency operation', IEEE Transactions on Industrial Electronics, Volume 47, No. 1, 2000, pp. 9-16
- K. Sheng, S.J. Finney and B.W. Williams, 'A new analytical IGBT model with improved electrical characteristics', IEEE Transactions on Power Electronics, Volume 14, No. 1, 1999, pp. 98-107
- N. McNeill, K. Sheng, B.W. Williams and S.J. Finney 'Assessment of off-State negative gate voltage requirements for IGBTs', IEEE Transactions on Power Electronics, Volume 13, No. 3, 1998, pp. 436-440
- K. Sheng, B.W. Williams and S.J. Finney, 'Maximum operating junction temperature of PT and NPT IGBTs', IEE Electronics Letters, Nov 12 1998, Volume 34, No. 23, pp. 2276-2277
- K. Sheng, S.J. Finney and B.W. Williams, 'Fast and accurate IGBT model for PSpice', Electronics Letters, Volume 32, No. 25, 1996, pp. 2294-2295
- K. Sheng, L. Yu, J. Zhang and J.H. Zhao, ‘High Temperature Characterization of SiC BJTs for Power Switching Applications’ International Semiconductor Device Research Symposium, 2005, pp. 168-169
- J.H. Zhao, J. Zhang, X. Li and K Sheng, ‘Effect of graded base doping on the gain of SiC BJT’, International Semiconductor Device Research Symposium, 2005, pp. 398-399
- K. Sheng, J.H. Lee, P. Alexandrov and J.H. Zhao, ‘Characterization and application of SiC TI-VJFETs’, International Semiconductor Device Research Symposium, 2005, pp. 296-297
- L. Yu and K. Sheng, ‘Breaking the theoretical limit of SiC unipolar power device - a simulation study’, International Semiconductor Device Research Symposium, 2005, pp. 42-43
- J.S. Lai, H. Yu, J. Zhang, P. Alexandrov, Y. Li, J.H. Zhao, K. Sheng and A. Hefner, ‘Characterization of normally-off SiC vertical JFET devices and inverter circuits’, Industry Applications Conference, 2005, pp. 404-409
- Y. Wang, K. P. Cheung, K. Sheng, C.S. Pai, ‘A new low-cost MEMS capacitive pressure sensor concept’, Proceedings of SPIE - The International Society for Optical Engineering, Volume 5592, Nanofabrication: Technologies, Devices, and Applications, 2005, pp. 313-319
- S. Hu, K. Sheng, ‘A study of oxide reliability limitation on different field plate based termination techniques for SiC power devices’, Proceedings of the International Power Electronics and Motor Control Conference (IPEMC’04), August, 2004, pp. 868-872
- K. Sheng, ‘A MOS-Controlled Diode (MCD) for Power Integrated Circuits’, Proceedings of the International Power Electronics and Motor Control Conference (IPEMC’04), August, 2004, pp. 863-867
- J. H. Zhao, K. Tone, K. Sheng, X. Li, P. Alexandrov, L. Fursin, M. Weiner, T. Burke, ‘A High Performance 4H-SiC Normally-off VJFET’, Proceedings of the International Power Electronics and Motor Control Conference (IPEMC’04), 2004, pp. 342-346
- S. Hu, K. Sheng, ‘A New Edge Termination Technique for SiC Power Devices’, Proceedings of the International Semiconductor Device Research Symposium (ISDRS), Washington DC, 2003, pp. 122-123
- K. Sheng, ‘MOS-Controlled Diode (MCD) on Silicon-On-Insulator (SOI), Proceedgins of the 29th Annual Conference of the IEEE Industrial Electronics Society, IECON, Roanoke, USA, 2003, pp. 2602-2606
- U.N.K. Udugampol, R.A. McMahon, F. Udrea, K. Sheng, G.A.J. Amaratunga, E.M.S. Narayanan, S. Hardikar and M.M. De Souza, ‘Dual gate lateral inversion layer emitter transistor for power and high voltage integrated circuits’, Proceedings of International Symposium on Power Semiconductor Devices and ICs (ISPSD), 2003, pp. 216 –219
- P. Sannuti, X. Li, F. Yan, K. Sheng, J. H. Zhao, ‘Channel Mobility Study of 4H-SiC Lateral JFET’, 17th Annual Symposium Laboratory For Surface Modification, 2003
- U.N.K. Udugampola, G.F.W. Khoo, K. Sheng, R.A. McMahon, F. Udrea and G.A.J. Amaratunga, ‘Characterisation of dual gate lateral inversion layer emitter transistor’, International Conference on Power Electronics Machines and Drives, Bath, UK, 2002, pp. 557-561
- K. Sheng, U.N.K. Udugampola, G.F. Khoo, F. Udrea, G.A.J. Amaratunga, R.A. McMahon, E.M.S. Narayanan and S. Hardikar, ‘Dual Gate Lateral Inversion Layer Emitter Transistor’, IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Santa Fe, USA, 2002, pp. 37-40
- G. A. J. Amaratunga, R. Ng, K. Sheng, T. Trajkovic, F. Udrea, MOSFETS for POWER ICS: Present Status and Future Development, invited paper, Proceedings of the 10th EPE-PEMC Conference, Cavtat & Dubrovnik – Croatia, 2002
- R. Ng, K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘Lateral unbalanced Super Junction (USJ)/3D-RESURF for high breakdown voltage on SOI’, IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Osaka, Japan, 2001, pp. 395-398
- D. Garner, F. Udrea, G. Ensell, K. Sheng and G.A.J. Amaratunga, ‘Failure mechanisms of SOI high-voltage LIGBTs and LDMOSes under unclamped inductive switching’, IEEE International Symposium on Power Semiconductor Devices and ICs (ISPSD), Osaka, Japan, 2001, pp. 335-338
- A. Popescue, F. Udrea, K. Sheng, D. Garner, H.T. Lim, R. Ng, G. Khoo and W. Milne, ‘Advanced RESURF concepts in SOI devices – optimization and fabrication’, Silicon-on-Insulator Technology and Devices X, Proceedings of the Tenth International Symposium (Electrochemical Society Proceedings Vol.2001-3), Electrochem. Soc., Washington, DC, 2001, pp. 325-330
- A. Mumtaz*, K. Sheng, D. Garner, G. Khoo, T. Wilmhurst, F. Udrea, M. Rahimo, D. Hinchley, R.A. McMahon and G.A.J. Amaratunga, ‘Towards a single chip photovoltaic inverter for grid connected systems’, Regional World Renewable Energy Congress and The 7th Arab Conference on Solar Energy, Sharjah, UAE, 2001
- K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘Unconventional Behaviour of CoolMOS’, European Solid-State Device Researc Conference, Nuremberg, Germany, 2001, pp 251-254
- K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘A Novel Double Gate AC Switch’, European Solid-State Device Researc Conference, Nuremberg, Germany, 2001, pp. 407-410
- A. Mihaila, F. Udrea, K. Sheng and R. Azar, ‘Mixed-mode investigation of hybrid sic/si cascode configurations’, ISDRS’2001, Washington, U.S.A., Nov. 2001, pp. 575-578
- R. Ng, F. Udrea, K. Sheng, G.A.J. Amaratunga, ‘A study of the CoolMOS integral diode: analysis and optimisation’, 2001 International Semiconductor Conference. CAS 2001 Proceedings (Cat. No.01TH8547). IEEE. Volume 2, 2001, pp. 461-464
- K. Sheng, F. Udrea, G.A.J. Amaratunga, ‘Optimum carrier distribution of the IGBT’, Proceedings of EPE-PEMC, Kosice, Slovak Republic, 2000, Volume 3, pp. 209-215
- K. Sheng, F. Udrea, T. Trajkovic, S.M. Huang, G.A.J. Amaratunga and P. Waind, ‘PT and NPT IGBTs up to 1.2kV - which is optimum?’, Proceedings of EPE-PEMC, Kosice, Slovak Republic, 2000, Volume 3, pp. 204-208
- K. Sheng, S. M. Huang, F. Udrea and G.A.J. Amaratunga, ‘Quasi-punch-through structure for power semiconductor devices’, Proceedings of the Third International Conference on Power Electronics and Motion Control, Beijing, China, 2000, pp. 224-228
- S.M. Huang, K. Sheng, F. Udrea and G.A.J. Amaratunga, ‘Investigation of IGBT blocking characteristics’, Proceedings of the Third International Conference on Power Electronics and Motion Control, Beijing, China, 2000, pp. 407-411
- D.M. Garner, F. Udrea, H.T. Lim, G. Ensell, A.E. Popescu, K. Sheng and W.I. Milne, ‘Silicon on Insulator Power Integrated Circuits’, ISPS’2000, Prague, Czech Republic, pp. 123-129
- K. Sheng, B.W. Williams, X. He and Z. Qian, ‘Measurement of IGBT switching frequency limit’, Proceedings of Power Electronics Specialists Conference, Charleston, USA, 1999, pp. 375-379
- X. He, B.W. Williams, K. Sheng, S.J. Finney and Z. Qian, ‘A composite soft switching circuit for power inverters’, Proceedings of Applied Power Electronics Conference, Dallas, USA, 1999, pp. 1272-1278
- H. T. Lim, F. Udrea, D. Garner, K. Sheng, and W. I. Milne, ‘Partial SOI LDMOSFETs for high-side switching’, Proceedings of the International Semiconductor Conference, CAS, Sinaia, Romania, 1999, pp. 376-380
- K. Sheng, S.J. Finney and B.W. Williams, ‘An improved understanding of IGBT forward conduction’, Proceedings of the Second International Conference on Power Electronics and Motion Control, Hangzhou, China, 1997, Volume 1, pp. 48-55
- K. Sheng, S.J. Finney, B.W. Williams, X. N. He and Z. M. Qian, ‘IGBT switching losses’, Proceedings of the Second International Conference on Power Electronics and Motion Control, Hangzhou, China, 1997, Volume 1, pp. 274-277
Patent List
2003, Bi-directional semiconductor switch, UK patent #GB2380604A
2010, Voltage-sharing method for series connection of high frequency power electronic devices, CN101860201A 201010163716.5
2010, Voltage-sharing method for series connection of high frequency power electronic devices, CN201674394U 201020180204.5
2011, An insulated gate bipolar transistor, CN201838596U 201020590611.3